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Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: Article no.75010
Authors:  Yang XG;  Yang T;  Wang KF;  Ji HM;  Ni HQ;  Niu ZC;  Wang ZG;  Yang, XG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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High-density  Temperature-dependence  Self-formation  Layers  Well  Mbe  
Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 3, 页码: Article no.38401
Authors:  Yang XG;  Yang T;  Wang KF;  Gu YX;  Ji HM;  Xu PF;  Ni HQ;  Niu ZC;  Wang XD;  Chen YL;  Wang ZG;  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.44201
Authors:  Xu PF;  Yang T;  Ji HM;  Cao YL;  Gu YX;  Wang ZG;  Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Well Lasers  Dependence  Diode  Gain  
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 6, 页码: Article no.64320
Authors:  Gu YX;  Yang T;  Ji HM;  Xu PF;  Wang ZG;  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Photoluminescence  Emission  Inalas  
Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
Authors:  Ji;  HM;  Cao;  YL;  Xu PF;  Gu YX;  Ma WQ;  Liu Y;  Wang X;  Xie L;  Yang T;  Ji, HM, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
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Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
Authors:  Ji HM;  Yang T;  Cao YL;  Ma WQ;  Cao Q;  Chen LH;  Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Density-of-states  
Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 3, 页码: 1896-1900
Authors:  Ji HM;  Cao YL;  Yang T;  Ma WQ;  Cao Q;  Chen LH;  Ji HM Chinese Acad Sci Inst Semicond Nanooptoelect Lab Beijing 100083 Peoples R China. E-mail Address: tyang@semi.ac.cn
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Maximum Modal Gain  P-doped  Inas/gaas Quantum Dot Laser  
Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 1, 页码: Art. No. 013502
Authors:  Ma WQ;  Yang XJ;  Chong M;  Yang T;  Chen LH;  Shao J;  Lu X;  Lu W;  Song CY;  Uo HC;  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wqma@semi.ac.cn
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Detector  
Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 卷号: 40, 期号: 6, 页码: 2182-2184
Authors:  Yang T;  Tatebayashi J;  Nishioka M;  Arakawa Y;  Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Inas Quantum Dots  
Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
Authors:  Cao YL;  Yang T;  Ji HM;  Ma WQ;  Cao Q;  Chen LH;  Cao YL Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: tyang@semi.ac.cn
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Characteristics Temperature  P-doped  Quantum-dot (Qd) Laser  Saturation Modal Gain