SEMI OpenIR

浏览/检索结果: 共6条,第1-6条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Temporal Differential CMOS Image Sensor for Low-Light and High-Speed Applications 会议论文
International Symposium on Photoelectronic Detection and Imaging 2011 - Advances in Imaging Detectors and Applications, Beijing, PEOPLES R CHINA, 2011
作者:  Guan N (Guan Ning);  Zhang X (Zhang Xu);  Dong Z (Dong Zan);  Wang W (Wang Wei);  Gui Y (Gui Yun);  Han JQ (Han Jianqiang);  Wang Y (Wang Yuan);  Huang BJ (Huang Beiju);  Chen HD (Chen Hongda)
Adobe PDF(516Kb)  |  收藏  |  浏览/下载:1926/510  |  提交时间:2011/12/13
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
作者:  Wei M (Wei Meng);  Wang XL (Wang Xiaoliang);  Pan X (Pan Xu);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Zhang ML (Zhang Minglan);  Wang ZG (Wang Zhanguo)
Adobe PDF(668Kb)  |  收藏  |  浏览/下载:2445/494  |  提交时间:2011/07/15
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  Pan X (Pan Xu);  Wei M (Wei Meng);  Yang CB (Yang Cuibai);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang)
Adobe PDF(396Kb)  |  收藏  |  浏览/下载:3150/831  |  提交时间:2011/07/17
Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Huang BJ;  Xu Zhang;  Zan Dong;  Wei Wang;  Chen HD;  Huang, BJ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(4242Kb)  |  收藏  |  浏览/下载:1293/266  |  提交时间:2010/03/09
Silicon  
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载:1526/264  |  提交时间:2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Zhong P;  Lin YW;  Li LH;  Xu YQ;  Wei Z;  Wu RH;  Lin YW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载:1116/0  |  提交时间:2010/10/29
Operation