SEMI OpenIR

Browse/Search Results:  1-1 of 1 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
MBE生长的跨导为186 mS/mm的AlGaN/GaN HEMT 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 4, 页码: 484-488
Authors:  王晓亮;  胡国新;  王军喜;  刘宏新;  孙殿照;  曾一平;  李晋闽;  孔梅影;  林兰英;  刘新宇;  刘键;  钱鹤
Adobe PDF(371Kb)  |  Favorite  |  View/Download:1238/410  |  Submit date:2010/11/23