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Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 4, 页码: Art. No. 041907
Authors:  Zhang Q (Zhang Q.);  Wang XQ (Wang X. Q.);  Yin CM (Yin C. M.);  Xu FJ (Xu F. J.);  Tang N (Tang N.);  Shen B (Shen B.);  Chen YH (Chen Y. H.);  Chang K (Chang K.);  Ge WK (Ge W. K.);  Ishitani Y (Ishitani Y.);  Yoshikawa A (Yoshikawa A.)
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Ii-vi Semiconductors  Photoconductivity  Photovoltaic Effects  Semiconductor Epitaxial Layers  Spin-orbit Interactions  Valence Bands  Wide Band Gap Semiconductors  Zinc Compounds  
Unusual carrier thermalization in a dilute GaAs1-xNx alloy 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 6, 页码: Art.No.061905
Authors:  Tan PH;  Xu ZY;  Luo XD;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Tan, PH, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: pt290@cam.ac.uk;  yong_zhang@nrel.gov
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Photoluminescence  
Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 8, 页码: Art.No.081101
Authors:  Zhang JG;  Wang XX;  Cheng BW;  Yu JZ;  Wang QM;  Hau J;  Ding L;  Ge WK;  Zhang, JG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jianguochang@yahoo.com
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Doped Crystalline Silicon  
Observation of electric current induced by optically injected spin current 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 24, 页码: Art.No.242115
Authors:  Cui XD (Cui Xiao-Dong);  Shen SQ (Shen Shun-Qing);  Li J (Li Jian);  Ji Y (Ji Yang);  Ge WK (Ge Weikun);  Zhang FC (Zhang Fu-Chun);  Shen, SQ, Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: sshen@hkucc.hku.hk
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Quantum-wells  
Recombination kinetics of Te isoelectronic centers in ZnSTe 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 5, 页码: Art.No.052107
Authors:  Yang XD;  Xu ZY;  Sun Z;  Sun BQ;  Li GH;  Sou IK;  Ge WK;  Yang, XD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zyxu@red.semi.ac.cn
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Zinc-sulfide  
Sulfur-induced exciton localization in Te-rich ZnSTe alloy 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 16, 页码: Art.No.162108
Authors:  Yang, XD;  Xu, ZY;  Sun, Z;  Ji, Y;  Sun, BQ;  Sou, IK;  Ge, WK;  Yang, XD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zyxu@red.semi.ac.cn
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Quantum-wells  
Alloy states in dilute GaAs1-xNx alloys (x < 1%) 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 82, 期号: 11, 页码: 1697-1699
Authors:  Luo XD;  Huang JS;  Xu ZY;  Yang CL;  Liu J;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Luo XD,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices Microstruct,Beijing 100083,Peoples R China.
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Band-gap Reduction  Gaasn  Excitons  
Pressure behavior of Te isoelectronic centers in ZnS : Te 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 81, 期号: 17, 页码: 3170-3172
Authors:  Fang ZL;  Su FH;  Ma BS;  Ding K;  Han HX;  Li GH;  Sou IK;  Ge WK;  Fang ZL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Hydrostatic-pressure  Optical-absorption  Bound Excitons  Zinc-sulfide  Luminescence  Photoluminescence  Crystals  Alloys  
Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 81, 期号: 20, 页码: 3795-3797
Authors:  Luo XD;  Hu CY;  Xu ZY;  Luo HL;  Wang YQ;  Wang JN;  Ge WK;  Luo XD,Chinese Acad Sci,Inst Semicond,NLSM,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Room-temperature  Band Alignment  Gaas  Dots  Lasers  Operation  Offsets  
Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 23, 页码: 3595-3597
Authors:  Tsang MS;  Wang JN;  Ge WK;  Li GH;  Fang ZL;  Chen Y;  Han HX;  Li LH;  Pan Z;  Tsang MS,Hong Kong Univ Sci & Technol,Dept Phys,Clear Water Bay,Kowloon,Hong Kong,Peoples R China.
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Gainnas Alloys  Band-structure  Gaas  Nitrogen  Gan(x)As1-x  Impurities  Behavior  Mass