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Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 2, 页码: 121-125
Authors:  Wang Xiaoliang;  Hu Guoxin;  Wang Junxi;  Liu Xinyu;  Liu Hongxin;  Sun Dianzhao;  Zeng Yiping;  Qian He;  Li Jinmin;  Kong Meiying;  Lin Lanying
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Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 5, 页码: 455-458
Authors:  Zhao Youwen;  Sun Niefeng;  S. Fung;  C. D. Beling;  Sun Tongnian;  Lin Lanying
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Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 10, 页码: 1041-1045
Authors:  Zhao Youwen;  Luo Yilin;  Feng Hanyuan;  Beling C D;  Lin Lanying
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Preparation of Semi-Insulating Material by Annealing Undoped InP 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 3, 页码: 285-289
Authors:  Zhao Youwen;  Dong Hongwei;  Jiao Jinghua;  Zhao Jianqun;  Lin Lanying;  Sun Niefeng;  Sun Tongnian
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Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 8, 页码: 800-804
Authors:  Sun Guosheng;  Wang Lei;  Luo Muchang;  Zhao Wanshun;  Sun Dianzhao;  Zeng Yiping;  Li Jinmin;  Lin Lanying
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Al_xGa_(1-x)N and GaN/Al_xGa_(1-x)N Quantum Wells Grown by Gas Sourc 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 5, 页码: 407
Authors:  王晓亮;  孙殿照;  张剑平;  孔梅影;  曾一平;  李晋闽;  林兰英
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Formation of ZnS clusters in xeolite-Y 期刊论文
半导体学报, 1996, 卷号: 17, 期号: 12, 页码: 928
Authors:  Chen W(陈伟);  Lin ZJ(林兆军);  Wang ZG(王占国);  Lin LY(林兰英)
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高电子迁移率GaAs/AlxGa(1-x)As二维电子气(2DEG)异质结结构参数优化研究 期刊论文
半导体学报, 1995, 卷号: 16, 期号: 9, 页码: 706
Authors:  杨斌;  王占国;  陈涌海;  梁基本;  廖奇为;  林兰英;  朱战萍;  徐波;  李伟
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Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR 期刊论文
半导体学报, 1994, 卷号: 15, 期号: 3, 页码: 217
Authors:  Ma Zhenyu;  Wang Qiyuan;  Zan Yude;  Cai Tianhai;  Yu Yuanhuan;  Lin Lanying
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