SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy
Wang Xiaoliang; Hu Guoxin; Wang Junxi; Liu Xinyu; Liu Hongxin; Sun Dianzhao; Zeng Yiping; Qian He; Li Jinmin; Kong Meiying; Lin Lanying
2004
Source Publication半导体学报
Volume25Issue:2Pages:121-125
AbstractAlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized. The HEMT materials have a mobility of 1035cm~2/(V ? s) at sheet electron concentration of 1.0 * 10~(13)cm~(-2) at room temperature. For the de-vices fabricated using the malt-rials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic iransecmductance of IHfimS/mm are obtained on devices with gate length and width of l/-im and 80/im respectively. The f_t, unit-current-gain frequency of the devices,is about 18. 8GHz.
metadata_83institute of semiconductors, the chinese academy of sciences;microelectronics r&d center, the chinese academy of sciences;microelectronics r&d center, the chinese academy of sciences
Subject Area半导体材料
Funding Organization国家重点基础研究发展规划(Nos.G2 683,2 2CB3119 3),国家自然科学基金(批准号
Indexed ByCSCD
Language英语
CSCD IDCSCD:1359113
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17621
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Xiaoliang,Hu Guoxin,Wang Junxi,et al. Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy[J]. 半导体学报,2004,25(2):121-125.
APA Wang Xiaoliang.,Hu Guoxin.,Wang Junxi.,Liu Xinyu.,Liu Hongxin.,...&Lin Lanying.(2004).Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy.半导体学报,25(2),121-125.
MLA Wang Xiaoliang,et al."Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy".半导体学报 25.2(2004):121-125.
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