Browse/Search Results:  1-2 of 2 Help

Selected(0)Clear Items/Page:    Sort:
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1, 页码: 17103
Authors:  Cao, ZF;  Lin, ZJ;  Lu, YJ;  Luan, CB;  Yu, YX;  Chen, H;  Wang, ZG
Adobe PDF(255Kb)  |  Favorite  |  View/Download:770/220  |  Submit date:2013/03/20
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 9, 页码: 097104
Authors:  Lu YJ (Lu Yuan-Jie);  Lin ZJ (Lin Zhao-Jun);  Yu YX (Yu Ying-Xia);  Meng LG (Meng Ling-Guo);  Cao ZF (Cao Zhi-Fang);  Luan CB (Luan Chong-Biao);  Wang ZG (Wang Zhan-Guo)
Adobe PDF(147Kb)  |  Favorite  |  View/Download:681/198  |  Submit date:2013/04/02