SEMI OpenIR  > 中科院半导体材料科学重点实验室
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
Cao, ZF; Lin, ZJ; Lu, YJ; Luan, CB; Yu, YX; Chen, H; Wang, ZG
2012
Source PublicationCHINESE PHYSICS B
Volume21Issue:1Pages:17103
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23747
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Cao, ZF,Lin, ZJ,Lu, YJ,et al. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes[J]. CHINESE PHYSICS B,2012,21(1):17103.
APA Cao, ZF.,Lin, ZJ.,Lu, YJ.,Luan, CB.,Yu, YX.,...&Wang, ZG.(2012).Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes.CHINESE PHYSICS B,21(1),17103.
MLA Cao, ZF,et al."Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes".CHINESE PHYSICS B 21.1(2012):17103.
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