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无权访问的条目 期刊论文
作者:  Wu M;  Zhang BS;  Chen J;  Liu JP;  Shen XM;  Zhao DG;  Zhang JC;  Wang JF;  Li N;  Jin RQ;  Zhu JJ;  Yang H;  Wu, M, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(218Kb)  |  收藏  |  浏览/下载：1170/450  |  提交时间：2010/03/09
无权访问的条目 期刊论文
作者:  Zhao Q;  Li JC;  Zhou H;  Wang H;  Wang B;  Yan H;  Zhao, Q, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：1381/439  |  提交时间：2010/03/09
无权访问的条目 期刊论文
作者:  Li CB;  Mao RW;  Zuo YH;  Zhao L;  Shi WH;  Luo LP;  Cheng BW;  Yu JZ;  Wang QM;  Li, CB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: cbli@mail.semi.ac.cn
Adobe PDF(121Kb)  |  收藏  |  浏览/下载：983/337  |  提交时间：2010/03/09
无权访问的条目 期刊论文
作者:  Li, N;  Zhao, DG;  Yang, H;  Li, N, Inst Semicond, CAS, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lina@red.semi.ac.cn
Adobe PDF(155Kb)  |  收藏  |  浏览/下载：845/280  |  提交时间：2010/03/09
Growth and characterization of 4H-SiC by horizontal hot-wall CVD 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Sun, GS;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(925Kb)  |  收藏  |  浏览/下载：1380/293  |  提交时间：2010/03/29
Chemical-vapor-deposition  
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Gao, X;  Li, JM;  Sun, GS;  Zhang, NH;  Wang, L;  Zhao, WS;  Zeng, YP;  Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1172Kb)  |  收藏  |  浏览/下载：1163/196  |  提交时间：2010/03/29
Si(111)  Aln  
无权访问的条目 期刊论文
作者:  Li CB;  Li HX;  Mao RW;  Zuo YH;  Shi WH;  Zhao L;  Luo LP;  Cheng BW;  Yu JZ;  Wang QM;  Li, CB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(234Kb)  |  收藏  |  浏览/下载：1138/342  |  提交时间：2010/03/09
无权访问的条目 期刊论文
作者:  Li, N;  Zhao, DG;  Yang, H;  Li, N, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: lina@red.semi.ac.cn
Adobe PDF(141Kb)  |  收藏  |  浏览/下载：722/200  |  提交时间：2010/03/17
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Zhao, YW;  Dong, ZY;  Zhang, YH;  Li, CJ;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)  |  收藏  |  浏览/下载：1270/312  |  提交时间：2010/03/29
Deep-level Defects  Fe-doped Inp  Grown Inp  Spectroscopy  Resonance  Wafer  
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1325/208  |  提交时间：2010/03/29
4h-sic  Lpcvd Homoepitaxial Growth  Thermal Oxidization  Mos Structures  Hot-wall Cvd