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Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 7, 页码: Art. No. 077305
Authors:  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang);  Guo J (Guo Jie);  Tang B (Tang Bao);  Ren ZW (Ren Zheng-Wei);  He ZH (He Zhen-Hong);  Niu ZC (Niu Zhi-Chuan);  Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn
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Ir Detection Modules  Inas  
Structural and Magnetic Properties of Sm Implanted GaN 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: Art. No. 077502
Authors:  Jiang LJ;  Wang XL;  Xiao HL;  Wang ZG;  Feng C;  Zhang ML;  Tang J;  Jiang LJ Chinese Acad Sci Novel Mat Lab Inst Semicond Beijing 100083 Peoples R China. E-mail Address: ljjiang@semi.ac.cn
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Effect of CO on characteristics of AlGaN/GaN Schottky diode 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 8, 页码: 3025-3027
Authors:  Feng, C;  Wang, XL;  Yang, CB;  Xiao, HL;  Zhang, ML;  Jiang, LJ;  Tang, J;  Hu, GX;  Wang, JX;  Wang, ZG;  Feng, C, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: cfeng@semi.ac.cn
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Hemts  
Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708
Authors:  Ma ZY (Ma Zhi-Yong);  Wang XL (Wang Xiao-Liang);  Hu GX (Hu Guo-Xin);  Ran JX (Ran Jun-Xue);  Xiao HL (Xiao Hong-Ling);  Luo WJ (Luo Wei-Jun);  Tang J (Tang Jian);  Li JP (Li Jian-Ping);  Li JM (Li Jin-Min);  Ma, ZY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: mazhiyong@mail.semi.ac.cn
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