SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer
Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min); Ma, ZY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: mazhiyong@mail.semi.ac.cn
2007
Source PublicationCHINESE PHYSICS LETTERS
ISSNISSN: 0256-307X
Volume24Issue:6Pages:1705-1708
AbstractA new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high Al composition AlGaN barrier. The high 2DEG mobility of 1806 cm(2)/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5 Omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/mm and a maximum drain current density of 800 mA/mm.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china
KeywordElectron-mobility Transistors
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9476
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorMa, ZY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: mazhiyong@mail.semi.ac.cn
Recommended Citation
GB/T 7714
Ma ZY ,Wang XL ,Hu GX ,et al. Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer[J]. CHINESE PHYSICS LETTERS,2007,24(6):1705-1708.
APA Ma ZY .,Wang XL .,Hu GX .,Ran JX .,Xiao HL .,...&Ma, ZY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: mazhiyong@mail.semi.ac.cn.(2007).Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer.CHINESE PHYSICS LETTERS,24(6),1705-1708.
MLA Ma ZY ,et al."Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer".CHINESE PHYSICS LETTERS 24.6(2007):1705-1708.
Files in This Item:
File Name/Size DocType Version Access License
2089.pdf(547KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Ma ZY (Ma Zhi-Yong)]'s Articles
[Wang XL (Wang Xiao-Liang)]'s Articles
[Hu GX (Hu Guo-Xin)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ma ZY (Ma Zhi-Yong)]'s Articles
[Wang XL (Wang Xiao-Liang)]'s Articles
[Hu GX (Hu Guo-Xin)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ma ZY (Ma Zhi-Yong)]'s Articles
[Wang XL (Wang Xiao-Liang)]'s Articles
[Hu GX (Hu Guo-Xin)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.