SEMI OpenIR

Browse/Search Results:  1-1 of 1 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 766-769
Authors:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Ctr Mat Sci,Inst Semicond,Beijing 10083,Peoples R China.
Adobe PDF(96Kb)  |  Favorite  |  View/Download:1164/300  |  Submit date:2010/08/12
Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation