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Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:  Li, HJ;  Liu, CB;  Liu, GP;  Wei, HY;  Jiao, CM;  Wang, JX;  Zhang, H;  Jin, DD;  Feng, YX;  Yang, SY;  Wang, LS;  Zhu, QS;  Wang, ZG
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Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 页码: 7-10
Authors:  Zhou, Kun;  Liu, Jianping;  Zhang, Shuming;  Li, Zengcheng;  Feng, Meixin;  Li, Deyao;  Zhang, Liqun;  Wang, Feng;  Zhu, Jianjun;  Yang, Hui
Adobe PDF(739Kb)  |  Favorite  |  View/Download:808/289  |  Submit date:2013/08/27
Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 270, 期号: 3-4, 页码: 316-321
Authors:  Zhang BS;  Wu M;  Liu JP;  Chen J;  Zhu JJ;  Shen XM;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Boyd AR;  Zhang, BS, Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Weixing Rd 7083, Changchun 130022, Peoples R China. 电子邮箱地址: baoshunzhang@126.com
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X-ray Diffraction  
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
Authors:  Zhang BS;  Wu M;  Shen XM;  Chen J;  Zhu JJ;  Liu JP;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Zhang BS,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Metalorganic Chemical Vapor Deposition  Nitrides  Semiconductor Iii-v Materials  Molecular-beam Epitaxy  High-quality Gan  Chemical-vapor-deposition  Intermediate Layer  Alas  Aln  Surfaces  Silicon  Films  
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Shen XM;  Feng G;  Liu JP;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowths  Surface Morphology  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  Light-emitting-diodes  Sapphire Substrate  Nucleation Layers  Quality  Temperature  
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Shen XM;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  High-quality Gan  Buffer Layer  Threading Dislocations  Temperature  Evolution  Surface  Movpe  
X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 254, 期号: 1-2, 页码: 23-27
Authors:  Shen XM;  Wang YT;  Zheng XH;  Zhang BS;  Chen J;  Feng G;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Buffer Layers  X-ray Diffraction  Metalorganic Chemical Vapor Deposition  Nitrides  Vapor-phase Epitaxy  Nucleation Layers  Cubic Gan  (001)Gaas Substrate  Strain Relaxation  Temperature  Deposition  Quality  Diodes  
Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13
Authors:  Shen XM;  Feng G;  Zhang BS;  Duan LH;  Wang YT;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Scanning Electron Microscopy  X-ray Diffraction  Metalorganic Vapor Phase Epitaxy  Selective Area Growth  Gallium Nitride  Cubic Gan  Overgrown Gan  Deposition  Gaas(100)  
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
Authors:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(102Kb)  |  Favorite  |  View/Download:1874/827  |  Submit date:2010/08/12
X-ray Diffraction  Metalorganic Vapor Phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Buffer Layer  Gan  Growth  
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
Authors:  Shen XM;  Fu Y;  Feng G;  Zhang BS;  Feng ZH;  Wang YT;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Transmission Electron Microscopy  X-ray Diffraction  Epitaxial Lateral Overgrowth  Metalorganic Vapor Phase Epitaxy  Cubic Gallium Nitride  Chemical-vapor-deposition  Cubic Gan  Phase Epitaxy  Reduction  Growth