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The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 23, 页码: Art.No.235104
Authors:  Zhu, JH (Zhu, J. H.);  Wang, LJ (Wang, L. J.);  Zhang, SM (Zhang, S. M.);  Wang, H (Wang, H.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Liu, ZS (Liu, Z. S.);  Jiang, DS (Jiang, D. S.);  Qiu, YX (Qiu, Y. X.);  Yang, H (Yang, H.);  Zhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Multiple-quantum Wells  
Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 46, 期号: 3, 页码: 498-506
Authors:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Fan WJ Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address:
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Band Structure  K.p Method  Quantum Dots  Diluted Nitride  Optical Gain  
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 8, 页码: Art. No. 087802
Authors:  Ruan J;  Yu TJ;  Jia CY;  Tao RC;  Wang ZG;  Zhang GY;  Yu TJ Peking Univ Sch Phys State Key Lab Mesoscop Phys Beijing 100871 Peoples R China. E-mail Address:
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Quantum-well Lasers  Optical Gain  Emission  Gan  Photoluminescence  Semiconductors  Luminescence  Spectra  Origin  Energy  
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 1, 页码: Art. No. 013911
Authors:  Lu J;  Meng HJ;  Deng JJ;  Xu PF;  Chen L;  Zhao JH;  Jia QJ;  Zhao JH Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Annealing  Gallium Arsenide  Iron  Magnetic Anisotropy  Magnetic Epitaxial Layers  Magnetisation  Molecular Beam Epitaxial Growth  Transmission Electron Microscopy  X-ray Diffraction  
Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface 期刊论文
Authors:  Lu J;  Xu PF;  Zhu YG;  Meng HJ;  Chen L;  Wang WZ;  Zhang XH;  Zhao JH;  Pan GQ;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address:
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Fe Thin Film  Anisotropic Strain Relaxation  Magnetic Anisotropy  X-ray Diffraction  Uniaxial Magnetic-anisotropy  Epitaxial-growth  Gaas(001)  Devices  
Observation of the surface circular photogalvanic effect in InN films 期刊论文
SOLID STATE COMMUNICATIONS, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Li M;  Fu DY;  Fang HN;  Xiu XQ;  Lu H;  Zheng YD;  Chen YH;  Tang CG;  Wang ZG;  Zhang R Nanjing Univ Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address:
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Inn  Surface Charge Accumulation Layer  Spin-dependent Current  Spin Splitting  
Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation 期刊论文
NANOSCALE RESEARCH LETTERS, 2009, 卷号: 4, 期号: 7, 页码: 753-757
Authors:  Wei TB;  Hu Q;  Duan RF;  Wang JX;  Zeng YP;  Li JM;  Yang Y;  Liu YL;  Wei TB Chinese Acad Sci Semicond Lighting Technol Res & Dev Ctr Inst Semicond Beijing 100083 Peoples R China. E-mail Address:
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Gan  Nonpolar  Hvpe  Nanoindentation  Cathodoluminescence  Raman Mapping  
Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods 期刊论文
SOLID STATE COMMUNICATIONS, 2009, 卷号: 149, 期号: 43-44, 页码: 1897-1901
Authors:  Zhou B;  Pan SW;  Chen R;  Chen SY;  Li C;  Lai HK;  Yu;  JZ;  Zhu XF;  Chen, SY, Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China. E-mail Address:
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Strain-induced  Electrochemical Anodization  Silicon Germanium  Heterogeneous Nanostructures  Porous Silicon Layer  Visible Photoluminescence  Surface-morphology  Thin-films  Si  Germanium  Superlattices  Nanocrystals  Relaxation  Growth  
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 10, 页码: Art. No. 103108
Authors:  Tang CG;  Chen YH;  Xu B;  Ye XL;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Aluminium Compounds  Gallium Arsenide  Iii-v Semiconductors  Internal Stresses  Reflectivity  Semiconductor Heterojunctions  Semiconductor Quantum Wells  
FBG pressure sensor based on the double shell cylinder with temperature compensation 期刊论文
MEASUREMENT, 2009, 卷号: 42, 期号: 3, 页码: 408-411
Authors:  Zhang WT;  Li F;  Liu YL;  Zhang WT Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Fiber Bragg Grating  Temperature Compensation  Pressure Sensor