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The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
Zhu, JH (Zhu, J. H.); Wang, LJ (Wang, L. J.); Zhang, SM (Zhang, S. M.); Wang, H (Wang, H.); Zhao, DG (Zhao, D. G.); Zhu, JJ (Zhu, J. J.); Liu, ZS (Liu, Z. S.); Jiang, DS (Jiang, D. S.); Qiu, YX (Qiu, Y. X.); Yang, H (Yang, H.); Zhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
2009
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume42Issue:23Pages:Art.No.235104
AbstractTwo emission peaks were observed in the low temperature photoluminescence (LTPL) spectra of an InGaN/GaN multiple quantum well (MQW) structure before and after nanopillar fabrication. After nanopillar fabrication it is found that among the two peaks the longer wavelength peak exhibits a clear blue shift and has a much stronger enhancement in LTPL intensity than the shorter one. Combined with x-ray diffraction and spatially resolved cathodoluminescence analyses, the difference induced by nanopillar fabrication is ascribed to different strain relaxation states in the lower and upper quantum well layers. It is found that the lower QW layers of the as-grown MQW which causes the longer wavelength PL peak are more strained, while the upper ones are almost fully strain-relaxed. Therefore, the nanopillar fabrication induces much less strain relaxation in the upper part of the MQW than in the lower one.
metadata_83[zhu, j. h.; wang, l. j.; zhang, s. m.; wang, h.; zhao, d. g.; zhu, j. j.; liu, z. s.; jiang, d. s.; yang, h.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [qiu, y. x.; yang, h.] chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215123, peoples r china
KeywordMultiple-quantum Wells
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation of China 60506001 607760476097604560836003National Basic Research Programme of China 2007CB936700 National Science Foundation for Distinguished Young Scholars 60925017
Indexed BySCI
Language英语
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/7521
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhu, JH ,Wang, LJ ,Zhang, SM ,et al. The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(23):Art.No.235104.
APA Zhu, JH .,Wang, LJ .,Zhang, SM .,Wang, H .,Zhao, DG .,...&Zhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn.(2009).The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(23),Art.No.235104.
MLA Zhu, JH ,et al."The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.23(2009):Art.No.235104.
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