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Mode Coupling and Directional Emission in Mirocylinder Lasers 会议论文
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE: 119-120 2010, Kyoto, JAPAN, SEP 26-30, 2010
作者:  Huang YZ (Huang Yong-Zhen);  Wang SJ (Wang Shi-Jiang);  Yang YD (Yang Yue-De);  Lin JD (Lin Jian-Dong);  Che KJ (Che Kai-Jun);  Xiao JL (Xiao Jin-Long);  Du Y (Du Yun)
Adobe PDF(146Kb)  |  收藏  |  浏览/下载：1408/228  |  提交时间：2011/07/14
Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Li ZY;  Zhu Y;  Zhou L;  Li YT;  Han WH;  Fan ZC;  Yu YD;  Yu JZ;  Li, ZY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(227Kb)  |  收藏  |  浏览/下载：1982/455  |  提交时间：2010/06/04
40-Gbps Low Chirp Electroabsorption Modulated Distributed Feedback Laser 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7219, San Jose, CA, JAN 28-29, 2009
作者:  Cheng YB (Cheng Yuanbing);  Pan JQ (Pan Jiaoqing);  Wang Y (Wang Yang);  Zhao LJ (Zhao Lingjuan);  Zhu HL (Zhu Hongliang);  Wang W (Wang Wei)
Adobe PDF(261Kb)  |  收藏  |  浏览/下载：1539/256  |  提交时间：2011/07/14
Experimental investigation of slow light phenomenon in photonic crystal waveguide line defect laser 会议论文
PROCEEDINGS OF THE 2008 INTERNATIONAL WORKSHOP ON METAMATERIALS, Nanjing, PEOPLES R CHINA, NOV 09-12, 2008
作者:  Xing MX;  Ren G;  Chen W;  Zhou WJ;  Wang HL;  Chen LH;  Zheng WH;  Xing, MX, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China.
Adobe PDF(750Kb)  |  收藏  |  浏览/下载：1249/273  |  提交时间：2010/03/09
Mode  
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Shou-Li Z;  De-Ping X;  Ya-Li I;  Hai-Lin C;  Yin-Zhe C;  Ang M;  Ji-He L;  Jun-Hua G;  Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载：1517/301  |  提交时间：2010/03/09
Rce- P-i-n-pd  
The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells 会议论文
PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007, Beijing, PEOPLES R CHINA, SEP 18-21, 2007
作者:  Shi, MJ;  Wang, ZG;  Zhang, C;  Peng, WB;  Zeng, XB;  Diao, HW;  Kong, GL;  Liao, XB;  Shi, MJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(134Kb)  |  收藏  |  浏览/下载：1525/265  |  提交时间：2010/03/09
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)  |  收藏  |  浏览/下载：1114/198  |  提交时间：2010/03/29
Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth  
The structure and function of neurons with variable nonlinear transfer function 会议论文
Proceedings of the 2005 International Conference on Neural Networks and Brain, Beijing, PEOPLES R CHINA, OCT 13-15, 2005
作者:  Wang, SJ;  Liu, YY;  Wang, SJ, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100083, Peoples R China.
Adobe PDF(495Kb)  |  收藏  |  浏览/下载：1065/266  |  提交时间：2010/03/29
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Ying-Qiang X;  Zhang W;  Niu ZC;  Wu RG;  Wang QM;  Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1623/495  |  提交时间：2010/10/29
Ganas  Sio2 Encapsulation  Rapid-thermal-annealing  Nitrogen Reorganization  Molecular-beam Epitaxy  Optical-properties  Mu-m  
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6), Sendai, JAPAN, MAR 20-22, 2003
作者:  Leung BH;  Fong WK;  Surya C;  Lu LW;  Ge WK;  Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1360/281  |  提交时间：2010/10/29
Gan  Low-frequency Noise  Deep Levels  Deep Level Transient Fourier Spectroscopy  Devices