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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1691/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1918/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
Si based quantum cascade structure: from energy band structures design to materials growth 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Hangzhou, PEOPLES R CHINA, JUN 09-14, 2008
作者:  Yu, JZ;  Han, GQ;  Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(458Kb)  |  收藏  |  浏览/下载：1719/311  |  提交时间：2010/03/09
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, TB;  Duan, RF;  Wang, JX;  Li, JM;  Huo, ZQ;  Zeng, YP;  Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)  |  收藏  |  浏览/下载：1806/511  |  提交时间：2010/03/09
Hvpe  Gan  Nitridation  Polarity  Etching  
Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Zhao LJ;  Zhang J;  Wang L;  Cheng YB;  Pan JQ;  Liu HB;  Zhu HL;  Zhou F;  Bian J;  Wang BJ;  Zhu NH;  Wei W;  Zhao, LJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(375Kb)  |  收藏  |  浏览/下载：2255/579  |  提交时间：2010/03/09
Tunable Lasers  
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Shou-Li Z;  De-Ping X;  Ya-Li I;  Hai-Lin C;  Yin-Zhe C;  Ang M;  Ji-He L;  Jun-Hua G;  Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载：1551/301  |  提交时间：2010/03/09
Rce- P-i-n-pd  
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1416/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)  |  收藏  |  浏览/下载：1152/198  |  提交时间：2010/03/29
Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth  
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhao C;  Chen YH;  Zhao M;  Zhang CL;  Xu B;  Yu LK;  Sun J;  Lei W;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
Adobe PDF(330Kb)  |  收藏  |  浏览/下载：1698/335  |  提交时间：2010/03/29
Monte Carlo Simulation  
The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S 会议论文
ICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Li J;  An JM;  Wang HJ;  Xia JL;  Gao DS;  Hu XW;  Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(423Kb)  |  收藏  |  浏览/下载：1455/412  |  提交时间：2010/03/29
Porous Silicon