The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S
Li J; An JM; Wang HJ; Xia JL; Gao DS; Hu XW; Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
2006
会议名称20th Congress of the International-Commission-for-Optics
会议录名称ICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码6029: S290-S290
会议日期AUG 21-26, 2005
会议地点Changchun, PEOPLES R CHINA
出版地1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者SPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-6060-5
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.
关键词Porous Silicon
学科领域半导体材料
主办者Int Commiss Opt.; Chinese Opt Soc.; Changchun Inst Opt, Fine Mech & Phys, CAS.; AFOSR Asia Off.; Chinese Acad Engn.; Chinese Acad Sci & Technol.; European Opt Soc.; IEEE LEOS.; Natl Nat Sci Fdn China.; Opt Soc Japan.; Opt Soc Korea.; Opt Soc Russia, Siberian.; Opt Soc Amer.; SPIE.
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9884
专题中国科学院半导体研究所(2009年前)
通讯作者Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Li J,An JM,Wang HJ,et al. The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2006:6029: S290-S290.
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