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Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:  Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1633/334  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Alloys  Gaas1-xnx  Photoluminescence  Relaxation  
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang SB;  Liao XB;  Xu YY;  Hu ZH;  Zeng XB;  Diao HW;  Luo MC;  Kong G;  Zhang SB Chinese Acad Sci Inst Semicond Ctr Condensed State Phys State Key Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(93Kb)  |  收藏  |  浏览/下载：1709/428  |  提交时间：2010/10/29
Polymorphous Silicon  Light-scattering  Thin-films  Si  Microcrystallinity  Absorption  States  
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(47Kb)  |  收藏  |  浏览/下载：1446/302  |  提交时间：2010/10/29
Spectrum  
无权访问的条目 期刊论文
作者:  Li XZ;  Xia JB;  Li XZ,Chinese Ctr Adv Sci & Technol,World Lab,POB 8730,Beijing 100080,Peoples R China.
Adobe PDF(92Kb)  |  收藏  |  浏览/下载：744/212  |  提交时间：2010/08/12
Fabrication of semiconductor optical amplifiers and a novel gain measuring technique 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Huang YZ;  Guo WH;  Yu LJ;  Lu XL;  Tan MQ;  Ma XY;  Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(212Kb)  |  收藏  |  浏览/下载：1220/276  |  提交时间：2010/10/29
Spectra  Lasers  
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang QY;  Wang JH;  Deng HF;  Lin LY;  Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
Adobe PDF(132Kb)  |  收藏  |  浏览/下载：1760/328  |  提交时间：2010/11/15
Neutron Irradiation  Annealing  Defects In Silicon  Spectra  
Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
作者:  Li GH;  Fang ZL;  Su FH;  Ma BS;  Ding K;  Han HX;  Sou IK;  Ge WK;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1452/261  |  提交时间：2010/11/15
Optical-absorption  Zns-te  Transition  Edge  
无权访问的条目 期刊论文
作者:  Qin ZH;  Fang CS;  Pan QW;  Gu QT;  Wu XW;  Yu JZ;  Fang CS,Shandong Univ,State Key Lab Crystal Mat,Jinan 250100,Peoples R China.
Adobe PDF(120Kb)  |  收藏  |  浏览/下载：975/249  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Chen CY;  Chen WD;  Song SF;  Xu ZJ;  Liao XB;  Li GH;  Ding K;  Chen CY,Chinese Acad Sci,Inst Semicond,State Key Lab Surface Phys,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(250Kb)  |  收藏  |  浏览/下载：1040/288  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Luo XD;  Tan PH;  Xu ZY;  Ge WK;  Tan PH,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(59Kb)  |  收藏  |  浏览/下载：925/334  |  提交时间：2010/08/12