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GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy 会议论文
COMMAD 2000 PROCEEDINGS, BUNDOORA, AUSTRALIA, DEC 06-08, 2000
作者:  Pan Z;  Li LH;  Wang XY;  Lin YW;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1268/224  |  提交时间：2010/10/29
Operation  会议主办方: La Trobe Univ  Depts Electr Engn & Phys  
MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)  |  收藏  |  浏览/下载：1656/238  |  提交时间：2010/10/29
Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe  
Optical transitions in GaNAs/GaAs single quantum well 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Luo XD;  Xu ZY;  Sun BQ;  Pan Z;  Li LH;  Lin YW;  Ge WK;  Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(314Kb)  |  收藏  |  浏览/下载：1310/244  |  提交时间：2010/10/29
Ganas  Photoluminescence  Band Offset  Band Bowing Coefficient  Localized Exciton  Molecular-beam Epitaxy  Alloys  Temperature  Gaasn  
An investigation on fiber coupled polymer waveguide for electro-optic modulator 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Yang XH;  Du Y;  Yin AM;  Shi ZW;  Wu RH;  Li Z;  Zhou JY;  Zhao YX;  Shen YQ;  Yang XH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(150Kb)  |  收藏  |  浏览/下载：1600/434  |  提交时间：2010/10/29
Polymer  Dispersion  Waveguide  Mismatch Loss  Effective Index  Fiber Coupling  
Integrated multimode interference couplers in silicon-on insulator 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Wei HZ;  Yu YZ;  Zhang XF;  Liu ZL;  Ma HZ;  Li GH;  Shi W;  Fang CS;  Wei HZ Chinese Acad Sci Inst Semicond State Key Lab INtegrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(118Kb)  |  收藏  |  浏览/下载：1285/251  |  提交时间：2010/10/29
Soi  Multimode Interference  Optical Waveguide Device  Integrated Optics  Power Splitters  
Residual donors in undoped LEC InP 会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:  Zhao YW;  Sun NF;  Sun TN;  Lin LY;  Wu XW;  Guo WL;  Wu X;  Bi KY;  Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(231Kb)  |  收藏  |  浏览/下载：1480/331  |  提交时间：2010/10/29
Indium-phosphide  Carbon  Defects  Growth  
Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Liu XL;  Yuan HR;  Lu DC;  Wang XH;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(277Kb)  |  收藏  |  浏览/下载：1157/178  |  提交时间：2010/10/29
Mg-doped  Algan/gan Superlattices  Resistivity  Hole Concentration  Polarization  
Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors 会议论文
50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, LAS VEGAS, NV, MAY 21-24, 2000
作者:  Li C;  Yang QQ;  Ou HY;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1572/439  |  提交时间：2010/10/29
Mirrors  
Circular crating optical scanning holography 会议论文
DIFFRACTIVE/HOLOGRAPHIC TECHNOLOGIES AND SPATIAL LIGHT MODULATORS VII, 3951, SAN JOSE, CA, JAN 24-25, 2000
作者:  Liang WG;  Liu SY;  Xie JH;  Zhao DZ;  Liang WG Acad Sinica Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(218Kb)  |  收藏  |  浏览/下载：1329/307  |  提交时间：2010/10/29
Circular Grating  Scanning  Holography  Simulation  
Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes 会议论文
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 3938, SAN JOSE, CA, JAN 26-27, 2000
作者:  Wang GH;  Ma XY;  Zhang YF;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1182/0  |  提交时间：2010/10/29
Native Oxided Alas  Current Blocking Layer  Algainp  High Brightness Light Emitting Diodes