中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共5条，第1-5条 帮助

已选(0)清除 条数/页：   排序方式：
无权访问的条目 期刊论文
作者:  Jiang L;  Lin T;  Wei X;  Wang GH;  Zhang GZ;  Zhang HB;  Ma XY;  Jiang, L, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(116Kb)  |  收藏  |  浏览/下载：1693/724  |  提交时间：2010/03/09
无权访问的条目 期刊论文
作者:  Wei X;  Wang GH;  Zhang GZ;  Zhu XP;  Ma XY;  Chen LH;  Wei X,Chinese Acad Sci,Inst Semicond,Natl Engn Res Ctr Optoelect Devices,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1198/399  |  提交时间：2010/08/12
Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes 会议论文
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 3938, SAN JOSE, CA, JAN 26-27, 2000
作者:  Wang GH;  Ma XY;  Zhang YF;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1015/0  |  提交时间：2010/10/29
Native Oxided Alas  Current Blocking Layer  Algainp  High Brightness Light Emitting Diodes  
High brightness AlGaInP orange light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Li YZ;  Wang GH;  Ma XY;  Peng HI;  Wang ST;  Chen LH;  Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1297/359  |  提交时间：2010/10/29
High Brightness  Led  Mocvd  Algainp  
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Wang GH;  Ma XY;  Zhang YF;  Peng HI;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1355/352  |  提交时间：2010/10/29
Led  Coupled Distributed Bragg Reflector  Mocvd  Algainp