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Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Lei W;  Chen YH;  Jin P;  Xu B;  Ye XL;  Wang ZG;  Huang XQ;  Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载：1459/261  |  提交时间：2010/03/29
Lateral Intersubband Photocurrent  
无权访问的条目 期刊论文
作者:  Chen YH (Chen Y. H.);  Ye XL (Ye X. L.);  Wang ZG (Wang Z. G.);  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(364Kb)  |  收藏  |  浏览/下载：933/255  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Wang JX (Wang Junxi);  Li HP (Li Jianping);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn
Adobe PDF(541Kb)  |  收藏  |  浏览/下载：2186/326  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Wang XL (Wang X. L.);  Zhao DG (Zhao D. G.);  Li XY (Li X. Y.);  Gong HM (Gong H. M.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: WXL@mail.semi.ac.cn
Adobe PDF(654Kb)  |  收藏  |  浏览/下载：1102/336  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Wang XL (Wang X. L.);  Zhao DG (Zhao D. G.);  Chen J (Chen J.);  Li XY (Li X. Y.);  Gong HM (Gong H. M.);  Yang H (Yang H.);  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: WXL@mail.semi.ac.cn
Adobe PDF(412Kb)  |  收藏  |  浏览/下载：1522/632  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Liang S (Liang S.);  Zhu HL (Zhu H. L.);  Ye XL (Ye X. L.);  Wang W (Wang W.);  Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn
Adobe PDF(363Kb)  |  收藏  |  浏览/下载：1190/388  |  提交时间：2010/04/11
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, XL;  Wang, CM;  Hu, GX;  Wang, JX;  Li, JP;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)  |  收藏  |  浏览/下载：1879/347  |  提交时间：2010/03/29
Molecular-beam Epitaxy  2-dimensional Electron-gas  Bulk Gan  Optimization  Layers  Hemts  
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, CM;  Wang, XL;  Hu, GX;  Wang, JX;  Li, JP;  Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)  |  收藏  |  浏览/下载：1245/297  |  提交时间：2010/03/29
High Breakdown Voltage  Mobility Transistors  Heterostructures  Sapphire  Ganhemts  
无权访问的条目 期刊论文
作者:  Chen YH;  Ye XL;  Xu B;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(387Kb)  |  收藏  |  浏览/下载：992/288  |  提交时间：2010/04/11
Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Fang, CB;  Wang, XL;  Wang, JX;  Liu, C;  Wang, CM;  Hu, GX;  Li, JP;  Li, CJ;  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)  |  收藏  |  浏览/下载：1373/262  |  提交时间：2010/03/29
Thermally Stimulated Current  Gallium Nitride  Defects