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Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:  Ji HM;  Yang T;  Cao YL;  Ma WQ;  Cao Q;  Chen LH;  Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(244Kb)  |  收藏  |  浏览/下载：1687/328  |  提交时间：2010/03/09
Density-of-states  
Multi channel micro neural probe fabricated with SOI 会议论文
2009 ICME INTERNATIONAL CONFERENCE ON COMPLEX MEDICAL ENGINEERING, Tempe, AZ, APR 09-11, 2009
作者:  Wang SJ (Wang Shujing);  Pei WH (Pei Weihua);  Guo K (Guo Kai);  Gui Q (Gui Qiang);  Wang Y (Wang Yu);  Zhang X (Zhang Xu);  Tang J (Tang Jun);  Chen HD (Chen Hongda);  Pei, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(231Kb)  |  收藏  |  浏览/下载：1967/473  |  提交时间：2010/03/09
Microelectrode Arrays  
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
JOURNAL OF APPLIED PHYSICS
作者:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen, J, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
Adobe PDF(1459Kb)  |  收藏  |  浏览/下载：1361/208  |  提交时间：2010/03/09
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