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无权访问的条目 期刊论文
作者:  Liu JP (Liu J. P.);  Shen GD (Shen G. D.);  Zhu JJ (Zhu J. J.);  Zhang SM (Zhang S. M.);  Jiang DS (Jiang D. S.);  Yang H (Yang H.);  Liu, JP, Beijing Univ Technol, Beijing Optoelect Technol Lab, Pingleyuan 100, Beijing 100022, Chaoyang Dist, Peoples R China. E-mail: jianpingliu76@hotmail.com
Adobe PDF(171Kb)  |  收藏  |  浏览/下载：1152/474  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Min C (Cui Min);  Zhang WJ (Zhang Weija);  Wang TM (Wang Tianmin);  Jin F (Jin Fei);  Li GH (Li Guohua);  Ding K (Ding Kun);  Min, C, Beihang Univ, Sch Sci, Ctr Condensed Phys & Mat Phys, Beijing 100083, Peoples R China. E-mail: xinzhu_hust@126.com;  weijia_zhang@sina.com.cn
Adobe PDF(232Kb)  |  收藏  |  浏览/下载：1417/323  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Li SS (Li Shu-Shen);  Xia JB (Xia Jian-Bai);  Li, SS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: sslee@red.semi.ac.cn
Adobe PDF(266Kb)  |  收藏  |  浏览/下载：650/226  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Hu B (Hu Bing);  Zhou X (Zhou Xia);  Tang Y (Tang Yan);  Gan HD (Gan Huadong);  Zhu H (Zhu Hui);  Li GR (Li Guirong);  Zheng HZ (Zheng Houzhi);  Hu, B, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: hubing@red.semi.ac.cn;  hzzheng@red.semi.ac.cn
Adobe PDF(132Kb)  |  收藏  |  浏览/下载：1146/319  |  提交时间：2010/04/11
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1476/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
无权访问的条目 期刊论文
作者:  Xu Y (Xu Ying);  Hu ZH (Hu Zhihua);  Diao HW (Diao Hongwei);  Cai Y (Cai Yi);  Zhang SB (Zhang Shibin);  Zeng XB (Zeng Xiangbo);  Hao HY (Hao Huiying);  Liao XB (Liao Xianbo);  Fortunato E (Fortunato Elvira);  Martins R (Martins Rodrigo);  Hu, ZH, New Univ Lisbon, Dept Mat Sci, Monte Caparica, P-2829516 Caparica, Almada, Portugal. E-mail: zhu@uninova.pt
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1220/318  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Ma L (Ma Long);  Huang YL (Huang Ying-Long);  Zhang Y (Zhang Yang);  Yang FH (Yang Fu-Hua);  Wang LC (Wang Liang-Chen);  Ma, L, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China. E-mail: malong@semi.ac.cn
Adobe PDF(407Kb)  |  收藏  |  浏览/下载：1031/325  |  提交时间：2010/04/11
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, CM;  Wang, XL;  Hu, GX;  Wang, JX;  Li, JP;  Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)  |  收藏  |  浏览/下载：1325/297  |  提交时间：2010/03/29
High Breakdown Voltage  Mobility Transistors  Heterostructures  Sapphire  Ganhemts  
无权访问的条目 期刊论文
作者:  Sun J;  Jin P;  Zhao C;  Yu LK;  Ye XL;  Xu B;  Chen YH;  Wang ZG;  Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
Adobe PDF(183Kb)  |  收藏  |  浏览/下载：1274/444  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Zhang Y;  Zeng YP;  Ma L;  Wang BQ;  Zhu ZP;  Wang LC;  Yang FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(307Kb)  |  收藏  |  浏览/下载：1317/245  |  提交时间：2010/04/11