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High temperature annealing behaviors of luminescent SIOx : H films 会议论文
LUMINESCENT MATERIALS, 560, SAN FRANCISCO, CA, APR 05-08, 1999
作者:  Ma ZX;  Xiang XB;  Sheng SR;  Liao XB;  Shao CL;  Umeno M;  Ma ZX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
收藏  |  浏览/下载：986/0  |  提交时间：2010/10/29
Raman-spectra  Silicon  Photoluminescence  
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文
ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523, SAN FRANCISCO, CA, APR 15-16, 1998
作者:  Wang HM;  Zeng YP;  Pan L;  Zhou HW;  Zhu ZP;  Kong MY;  Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1119Kb)  |  收藏  |  浏览/下载：898/155  |  提交时间：2010/10/29