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Annealing ambient controlled deep defect formation in InP 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Zeng YP;  Sun NF;  Sun TN;  Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)  |  收藏  |  浏览/下载：1478/301  |  提交时间：2010/10/29
Fe-doped Inp  Semiinsulating Inp  Point-defects  Pressure  Wafers  Traps  
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) 会议论文
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96, BERLIN, GERMANY, SEP 21-26, 2003
作者:  Yu JZ;  Li C;  Cheng BW;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
Adobe PDF(459Kb)  |  收藏  |  浏览/下载：1197/218  |  提交时间：2010/11/15
Dbr (Distributed Bragg Reflector)  Mqw (Multiple Quantum Wells)  Optical Fiber Communication  Photodiode  Rce-pd (Resonant-cavity-enhanced Photodiode)  Responsivity  Sige/si  Soi  
A V-shaped module technique for promoting generation photocurrent density of silicon solar cells 会议论文
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, MAY 31-JUN 02, 2004
作者:  Li, JM;  Chong, M;  Duan, XF;  Xu, JD;  Gao, M;  Wang, FL;  Li, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(135Kb)  |  收藏  |  浏览/下载：1565/370  |  提交时间：2010/03/29
Silicon  Solar Cells  V-shaped Structure  
Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K;  Zheng, ZS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(519Kb)  |  收藏  |  浏览/下载：1307/244  |  提交时间：2010/03/29
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Li, N;  Zhang, GQ;  Liu, ZL;  Fan, K;  Zheng, ZS;  Lin, Q;  Zhang, ZX;  Lin, CL;  Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1698/231  |  提交时间：2010/03/29
Simox  Fluorine  Ionizing Radiation