In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
	Sun, GS; Zhao, YM; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP; Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
	2009
会议名称	International Conference on Silicon Carbide and Related Materials
会议录名称	SILICON CARBIDE AND RELATED MATERIALS 2007
页码	PTS 1 AND 2,600-603,: 147-150 Part 1-2
会议日期	OCT 14-19, 2007
会议地点	Otsu, JAPAN
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
部门归属	[sun, guosheng; zhao, yongmei; wang, liang; wang, lei; zhao, wanshun; liu, xingfang; ji, gang; zeng, yiping] chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
摘要	The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.
关键词	In-situ Doping Boron Aluminum Memory Effects Hot-wall Lpcvd 4h-sic
学科领域	半导体材料
主办者	Japan Soc Appl phys.; Assoc Promot Elect, Elect & Informat Engn.; Ceram Soc Japan.; IEEE EDS, Kansai Chapter.; IEEJ.; Inst Elect, Informat & Commun Engineers.; Japanese Assoc Crystal Growth.; Surface Sci Soc Japan.; Vacuum Soc Japan.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8334
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Sun, GS,Zhao, YM,Wang, L,et al. In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2009:PTS 1 AND 2,600-603,: 147-150 Part 1-2.

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