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题名: In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
作者: Sun, GS;  Zhao, YM;  Wang, L;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP
出版日期: 2009
会议日期: OCT 14-19, 2007
摘要: The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.
会议名称: International Conference on Silicon Carbide and Related Materials
KOS主题词: Bore;  Aluminum
会议文集: SILICON CARBIDE AND RELATED MATERIALS 2007
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Sun, GS;Zhao, YM;Wang, L;Wang, L;Zhao, WS;Liu, XF;Ji, G;Zeng, YP.In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD .见:TRANS TECH PUBLICATIONS LTD .SILICON CARBIDE AND RELATED MATERIALS 2007,LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND ,2009,PTS 1 AND 2,600-603,: 147-150 Part 1-2
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