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题名: The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M
作者: Yang, H;  Chen, Y;  Wang, LB;  Yi, XY;  Fan, JM;  Liu, ZQ;  Yang, FH;  Wang, LC;  Wang, GH;  Zeng, YP;  Li, JM
出版日期: 2008
会议日期: NOV 12-14, 2007
摘要: We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the output power increasing is inconspicuous when the thickness is more than 200um. The structure on bottom face of sapphire substrates can enhance the extraction efficiency of GaN-based LED, too. The difference of output power between the flip-chip LED with smooth bottom surface and the LED with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. But for those LEDs grown on patterned sapphire substrate the difference is only about 10%. Another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched LEDs is improved about 50% than a common. case.
会议名称: Conference on Solid State Lighting and Solar Energy Technologies
KOS主题词: Materials handling;  Grinding machines;  Geometrical optics
会议文集: SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Yang, H ; Chen, Y ; Wang, LB ; Yi, XY ; Fan, JM ; Liu, ZQ ; Yang, FH ; Wang, LC ; Wang, GH ; Zeng, YP ; Li, JM .The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M .见:SPIE-INT SOC OPTICAL ENGINEERING .SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6841: M8410-M8410
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