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title: 采用干法刻蚀技术实现RTD与HEMT单片集成的方法
author: 马龙;  杨富华;  王良臣;  黄应龙
metadata_47: 2007-10-31
Appears in Collections:半导体研究所机构知识库_专利

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马龙;杨富华;王良臣;黄应龙,采用干法刻蚀技术实现RTD与HEMT单片集成的方法,200610076521 ,20060428
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