Advanced   Register
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 专利

title: 高击穿电压的高电子迁移率晶体管
author: 徐晓华;  倪海桥;  牛智川;  贺正宏;  王建林
metadata_47: 2005-12-14
Appears in Collections:半导体研究所机构知识库_专利

Files in This Item:

File SizeFormat
full/200410046387.pdf425KbAdobe PDF 联系获取全文

Permission Statement: All products of this item follow the Knowledge sharing protocol (Creative Commons)

Recommended Citation:
徐晓华;倪海桥;牛智川;贺正宏;王建林,高击穿电压的高电子迁移率晶体管 ,CN200410046387.0,20040608
 Recommend this item
 Sava as my favorate item
 Show this item's statistics
 Export Endnote File
Google Scholar
 Similar articles in Google Scholar
 [徐晓华]'s Articles
 [倪海桥]'s Articles
 [牛智川]'s Articles
CSDL cross search
 Similar articles in CSDL Cross Search
 [徐晓华]‘s Articles
 [倪海桥]‘s Articles
 [牛智川]‘s Articles
Scirus search
 Similar articles in Scirus
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to  Add to Digg  Add to Reddit 
所有评论 (0)

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.



Valid XHTML 1.0! Copyright © 2007-2012  中国科学院半导体研究所  -Feedback
Technical Support Lanzhou Branch of National Science Library, Chinese Academy of Sciences
Based on DSpace by MIT and Hewlett-Packard