Advanced   Register
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 专利

title: 一种单/多层异质量子点结构的制作方法
author: 陈振;  陆大成;  韩培德;  刘祥林;  王晓晖;  李昱峰;  王占国
metadata_47: 2003-4-30
Appears in Collections:半导体研究所机构知识库_专利

Files in This Item:

File SizeFormat
full/01136843.pdf643KbAdobe PDF 联系获取全文

Permission Statement: All products of this item follow the Knowledge sharing protocol (Creative Commons)

Recommended Citation:
陈振;陆大成;韩培德;刘祥林;王晓晖;李昱峰;王占国,一种单/多层异质量子点结构的制作方法 ,CN01136843.8,20011026
 Recommend this item
 Sava as my favorate item
 Show this item's statistics
 Export Endnote File
Google Scholar
 Similar articles in Google Scholar
 [陈振]'s Articles
 [陆大成]'s Articles
 [韩培德]'s Articles
CSDL cross search
 Similar articles in CSDL Cross Search
 [陈振]‘s Articles
 [陆大成]‘s Articles
 [韩培德]‘s Articles
Scirus search
 Similar articles in Scirus
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to  Add to Digg  Add to Reddit 
所有评论 (0)

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.



Valid XHTML 1.0! Copyright © 2007-2012  中国科学院半导体研究所  -Feedback
Technical Support Lanzhou Branch of National Science Library, Chinese Academy of Sciences
Based on DSpace by MIT and Hewlett-Packard