SEMI OpenIR  > 光电子研究发展中心
氮化镓同质衬底上激光器量子阱有源区的同温生长方法
赵德刚; 陈平; 刘宗顺; 朱建军; 江德生; 杨辉
Rights Holder中国科学院半导体所
Date Available2016-09-28
Country中国
Subtype发明
Subject Area光电子学
Application Date2015-01-12
Application NumberCN201510012720.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27616
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
赵德刚,陈平,刘宗顺,等. 氮化镓同质衬底上激光器量子阱有源区的同温生长方法.
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氮化镓同质衬底上激光器量子阱有源区的同温(818KB) 限制开放LicenseApplication Full Text
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