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降低电子泄漏的砷化镓激光器的制作方法
李翔; 赵德刚; 江德生; 刘宗顺; 陈平; 朱建军
Rights Holder中国科学院半导体所
Date Available2016-08-30
Country中国
Subtype发明
Subject Area光电子学
Application Date2014-10-21
Application NumberCN201410563125.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27281
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
李翔,赵德刚,江德生,等. 降低电子泄漏的砷化镓激光器的制作方法.
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