Si基溅射法AlN缓冲层薄膜制备研究 | |
张硕 | |
Subtype | 硕士 |
Thesis Advisor | 段瑞飞 |
2016-05-26 | |
Degree Grantor | 中国科学院研究生院 |
Place of Conferral | 北京 |
Degree Discipline | 材料物理与化学 |
Keyword | Aln 溅射法 Si(100)衬底 氧污染 椭偏测量 |
Subject Area | 半导体材料 |
Date Available | 2016-06-12 |
Document Type | 学位论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27201 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | 张硕. Si基溅射法AlN缓冲层薄膜制备研究[D]. 北京. 中国科学院研究生院,2016. |
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硕士学位论文(定稿2).pdf(3543KB) | 限制开放 | License | Application Full Text |
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