| Si基溅射法AlN缓冲层薄膜制备研究 | |
| 张硕 | |
| Subtype | 硕士 |
| Thesis Advisor | 段瑞飞 |
| 2016-05-26 | |
| Degree Grantor | 中国科学院研究生院 |
| Place of Conferral | 北京 |
| Degree Discipline | 材料物理与化学 |
| Keyword | Aln 溅射法 Si（100）衬底 氧污染 椭偏测量 |
| Subject Area | 半导体材料 |
| Date Available | 2016-06-12 |
| Document Type | 学位论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27201 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 张硕. Si基溅射法AlN缓冲层薄膜制备研究[D]. 北京. 中国科学院研究生院,2016. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 硕士学位论文（定稿2）.pdf（3543KB） | 限制开放 | License | Application Full Text | |||
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