SEMI OpenIR  > 中科院半导体照明研发中心
Si基溅射法AlN缓冲层薄膜制备研究
张硕
Subtype硕士
Thesis Advisor段瑞飞
2016-05-26
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline材料物理与化学
KeywordAln 溅射法 Si(100)衬底 氧污染 椭偏测量
Subject Area半导体材料
Date Available2016-06-12
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27201
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
张硕. Si基溅射法AlN缓冲层薄膜制备研究[D]. 北京. 中国科学院研究生院,2016.
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