SEMI OpenIR  > 中科院半导体照明研发中心
AlGaN/GaN MOS-HFET功率开关器件制备技术研究
赵勇兵
Subtype博士
Thesis Advisor王国宏
2016-05-27
Degree Grantor中国科学院大学
Place of Conferral北京
Degree Discipline微电子学与固体电子学
KeywordAlgan/gan Hfet 特征导通电阻 击穿电压 增强型器件 阈值电压
Subject Area半导体材料 ; 半导体器件 ; 微电子学
Date Available2016-06-01
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27127
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
赵勇兵. AlGaN/GaN MOS-HFET功率开关器件制备技术研究[D]. 北京. 中国科学院大学,2016.
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