SEMI OpenIR  > 中科院半导体材料科学重点实验室
GaN和GaSb基稀磁半导体、肖特基结的制备及其性质研究
陶东言
Subtype博士
Thesis Advisor赵有文
2015-05-27
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline材料物理与化学
Keyword稀磁半导体 Gan Gasb 表面钝化 肖特基器件
Date Available2015-05-29
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26500
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
陶东言. GaN和GaSb基稀磁半导体、肖特基结的制备及其性质研究[D]. 北京. 中国科学院研究生院,2015.
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