| 表面等离激元增强GaN基纳米孔LED的制备方法 | |
| 朱石超; 赵丽霞; 于治国; 孙雪娇; 王军喜; 李晋闽 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-09-17 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体器件 |
| Application Date | 2014-06-19 |
| Application Number | CN201410276182.5 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25913 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 朱石超,赵丽霞,于治国,等. 表面等离激元增强GaN基纳米孔LED的制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 表面等离激元增强GaN基纳米孔LED的制（450KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment