表面等离激元增强GaN基纳米孔LED的制备方法 | |
朱石超; 赵丽霞; 于治国; 孙雪娇; 王军喜; 李晋闽 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2014-09-17 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体器件 |
Application Date | 2014-06-19 |
Application Number | CN201410276182.5 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25913 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | 朱石超,赵丽霞,于治国,等. 表面等离激元增强GaN基纳米孔LED的制备方法. |
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表面等离激元增强GaN基纳米孔LED的制(450KB) | 限制开放 | License | Application Full Text |
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