SEMI OpenIR  > 半导体集成技术工程研究中心
一种制备图形化多孔硅结构的方法
赵永梅; 杨香; 季安; 张明亮; 韩国威; 宁瑾; 王晓东; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2014-03-19
Country中国
Subtype发明
Subject Area微电子学
Application Date2013-12-19
Application NumberCN201310706907.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25458
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
赵永梅,杨香,季安,等. 一种制备图形化多孔硅结构的方法.
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