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Researching the silicon direct wafer bonding with interfacial SiO2 layer 期刊论文
Journal of Semiconductors, 2016, 卷号: 37, 期号: 5, 页码: 056001
Authors:  Wang Xiaoqing;  Yu Yude;  Ning Jin
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Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials 期刊论文
Acta Physica Sinica, 2013, 卷号: 62, 期号: 11, 页码: 117303
Authors:  Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An
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Fabrication and characterization of an SOI MEMS gyroscope 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 6, 页码: 064004
Authors:  Zhong Weiwei;  Han Guowei;  Si Chaowei;  Ning Jin;  Yang Fuhua
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Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced notch 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 4, 页码: 045006
Authors:  Han, Guowei;  Si, Chaowei;  Ning, Jin;  Zhong, Weiwei;  Sun, Guosheng;  Zhao, Yongmei;  Yang, Fuhua
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Fabrication and characterisation of polysilicon-based clamped-clamped filter 期刊论文
Key Engineering Materials, 2011, 卷号: 483, 页码: 112-116
Authors:  Zhao, Yongmei;  Ning, Jin;  Han, Guowei;  Si, Chaowei;  Zhao, Y.(ymzhao@semi.ac.cn)
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Electromechanical Filters  Fabrication  Microelectromechanical Devices  Nanotechnology  Polysilicon  Resonators  Technology  
电学测试的汞探针装置 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-10, 2010-08-12
Inventors:  纪 刚;  孙国胜;  宁 瑾;  刘兴昉;  赵永梅;  王 雷;  赵万顺;  曾一平;  李晋闽
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Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 8, 页码: Art. No. 088101
Authors:  Sun GS (Sun Guo-Sheng);  Liu XF (Liu Xing-Fang);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Yang T (Yang Ting);  Wu HL (Wu Hai-Lei);  Yan GG (Yan Guo-Guo);  Zhao YM (Zhao Yong-Mei);  Ning J (Ning Jin);  Zeng YP (Zeng Yi-Ping);  Li JM (Li Jin-Min)
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3c-sic  Heteroepitaxial  Multi-wafer  Uniformity  
碳化硅射频微电子机械系统滤波器的制作方法 专利
专利类型: 发明, 申请日期: 2009-07-01, 公开日期: 3999
Inventors:  赵永梅;  宁 瑾;  孙国胜;  王 亮;  刘兴昉;  赵万顺;  王 雷;  李晋闽;  曾一平 
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多晶立方相碳化硅微机电系统谐振器件及其制作方法 专利
专利类型: 发明, 申请日期: 2009-06-03, 公开日期: 3996
Inventors:  王 亮;  宁 瑾;  孙国胜;  王 雷;  赵万顺;  赵永梅;  刘兴昉 
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氧化硅上制备低阻碳化硅的方法 专利
专利类型: 发明, 申请日期: 2009-05-27, 公开日期: 3996
Inventors:  赵永梅;  孙国胜;  宁 瑾;  王 亮;  刘兴昉;  赵万顺;  王 雷;  李晋闽;  曾一平
Adobe PDF(564Kb)  |  Favorite  |  View/Download:1157/262  |  Submit date:2010/03/19