SEMI OpenIR  > 中科院半导体照明研发中心
制备倒梯形氮化镓基发光二极管的方法
张逸韵; 谢海忠; 杨华; 李璟; 伊晓燕; 王军喜; 王国宏; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2012-07-04
Country中国
Subtype发明
Subject Area半导体器件
Application Date2012-03-06
Application NumberCN201210057275.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25346
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
张逸韵,谢海忠,杨华,等. 制备倒梯形氮化镓基发光二极管的方法.
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