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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Improved light output from InGaN LEDs by laser-induced dumbbell-like air-voids
期刊论文
Optics Express, 2013, 卷号: 21, 期号: 26, 页码: 32582
Authors:
Zhang, Yiyun
;
Xie, Haizhong
;
Zheng, Haiyang
;
Dong, Peng
;
Yang, Hua
;
Yi, Xiaoyan
;
Wang, Guohong
Adobe PDF(1602Kb)
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View/Download:757/169
  |  
Submit date:2014/04/09
Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters
期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 5, 页码: 054009
Authors:
Zheng, Huaiwen
;
Zhang, Yiyun
;
Yang, Hua
;
Xue, Bin
;
Wu, Kui
;
Li, Jing
;
Wang, Guohong
Adobe PDF(1728Kb)
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View/Download:792/181
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Submit date:2013/05/13
Luminous efficacy and color rendering index of high power white LEDs packaged by using red phosphor
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 1, 页码: 014011-1-014011-3
Authors:
Lu Pengzhi
;
Yang Hua
;
Wang Guohong
Adobe PDF(558Kb)
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View/Download:935/239
  |  
Submit date:2011/08/16
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:
Deng Y
;
Zhao DG
;
Le LC
;
Jiang DS
;
Wu LL
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(311Kb)
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View/Download:1709/520
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Submit date:2011/07/05
Nitride Materials
Crystal Growth
Composition Fluctuations
X-ray Diffraction
Layer
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:
Zhu JH
;
Wang LJ
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1530Kb)
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View/Download:1594/524
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Submit date:2011/07/05
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:
Zhu JH
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Qiu YX
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1688Kb)
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View/Download:1610/448
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Submit date:2011/07/05
Diodes
Efficiency
Light-splitting photovoltaic system utilizing two dual-junction solar cells
期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 12, 页码: 1975-1978
Authors:
Xiong KL
;
Lu SL
;
Dong JR
;
Zhou TF
;
Jiang DS
;
Wang RX
;
Yang H
;
Yang, H, CAS, Suzhou Inst Nano Tech & Nano Bion, Ruoshui Rd 398, Suzhou 215125, Peoples R China.
Adobe PDF(681Kb)
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View/Download:1306/436
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Submit date:2011/07/05
Light Splitting
Gainp/gaas
Gainasp/ingaas
Dual Junction
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
期刊论文
: JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang
;
H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(319Kb)
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View/Download:1227/307
  |  
Submit date:2010/04/13
Nitride Materials
Photoconductivity And Photovoltaics
Computer Simulations
Films
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:
Wang LJ
;
Zhang SM
;
Zhu JH
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Jiang DS
;
Wang YT
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
Adobe PDF(699Kb)
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View/Download:1409/361
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Submit date:2010/04/05
Gan
Light Emitting Diode
Surface Treatment
Leakage Current
Threading Dislocation Densities
Layers
Ni/au
Leds
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Wang YT
;
Jia QJ
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(418Kb)
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View/Download:1759/452
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Submit date:2010/04/04
Nitride Materials
Crystal Growth
X-ray Diffraction
Time-resolved Photoluminescence
Light-emitting-diodes
Piezoelectric Fields
Laser-diodes
Dependence
Recombination
Polarization
Dynamics
Growth
Mocvd