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Improved light output from InGaN LEDs by laser-induced dumbbell-like air-voids 期刊论文
Optics Express, 2013, 卷号: 21, 期号: 26, 页码: 32582
Authors:  Zhang, Yiyun;  Xie, Haizhong;  Zheng, Haiyang;  Dong, Peng;  Yang, Hua;  Yi, Xiaoyan;  Wang, Guohong
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Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 5, 页码: 054009
Authors:  Zheng, Huaiwen;  Zhang, Yiyun;  Yang, Hua;  Xue, Bin;  Wu, Kui;  Li, Jing;  Wang, Guohong
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Luminous efficacy and color rendering index of high power white LEDs packaged by using red phosphor 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 1, 页码: 014011-1-014011-3
Authors:  Lu Pengzhi;  Yang Hua;  Wang Guohong
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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Diodes  Efficiency  
Light-splitting photovoltaic system utilizing two dual-junction solar cells 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 12, 页码: 1975-1978
Authors:  Xiong KL;  Lu SL;  Dong JR;  Zhou TF;  Jiang DS;  Wang RX;  Yang H;  Yang, H, CAS, Suzhou Inst Nano Tech & Nano Bion, Ruoshui Rd 398, Suzhou 215125, Peoples R China.
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Light Splitting  Gainp/gaas  Gainasp/ingaas  Dual Junction  
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang;  H;  Liu ZS;  Zhang SM;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Nitride Materials  Photoconductivity And Photovoltaics  Computer Simulations  Films  
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
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Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Wang YT;  Jia QJ;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  X-ray Diffraction  Time-resolved Photoluminescence  Light-emitting-diodes  Piezoelectric Fields  Laser-diodes  Dependence  Recombination  Polarization  Dynamics  Growth  Mocvd