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一种无间断生长高质量InGaN/GaN多量子阱的方法
李盼盼; 李鸿渐; 张逸韵; 李志聪; 梁萌; 李璟; 王国宏
Rights Holder中国科学院半导体研究所
Date Available2012-08-15
Country中国
Subtype发明
Subject Area半导体器件
Application Date2012-04-25
Application NumberCN201210124792.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25297
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
李盼盼,李鸿渐,张逸韵,等. 一种无间断生长高质量InGaN/GaN多量子阱的方法.
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