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150lm/W 的 GaN 基 LED 量子效率提升研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  李鸿渐
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Pyramid Array InGaNGaN Core–Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes 期刊论文
Applied Physics Express, 2013, 卷号: 6, 期号: 7, 页码: 072102
Authors:  Kang, Junjie;  Li, Zhi;  Li, Hongjian;  Liu, Zhiqiang;  Li, Xiao;  Yi, Xiaoyan;  Ma, Ping;  Zhu, Hongwei;  Wang, Guohong
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Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 10, 页码: 102104
Authors:  Kang, Junjie;  Li, Hongjian;  Li, Zhi;  Liu, Zhiqiang;  Ma, Ping;  Yi, Xiaoyan;  Wang, Guohong
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Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes 期刊论文
AIP Advances, 2013, 卷号: 3, 期号: 7, 页码: 072121
Authors:  Junjie Kang, Zhi Li, Hongjian Li, Zhiqiang Liu, Ping Ma, Xiaoyan Yi, Guohong Wang
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Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 1, 页码: 011105
Authors:  Li, Hongjian;  Kang, Junjie;  Li, Panpan;  Ma, Jun;  Wang, Hui;  Liang, Meng;  Li, Zhicong;  Li, Jing;  Yi, Xiaoyan;  Wang, Guohong
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Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well 期刊论文
APPLIED PHYSICS EXPRESS, 2013, 卷号: 6, 期号: 5, 页码: 052102
Authors:  Li, Hongjian;  Li, Panpan;  Kang, Junjie;  Li, Zhi;  Zhang, Yiyun;  Li, Zhicong;  Li, Jing;  Yi, Xiaoyan;  Li, Jinmin;  Wang, Guohong
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Low threading dislocation density in GaN films grown on patterned sapphire substrates 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 11, 页码: 113002
Authors:  Liang, Meng;  Wang, Guohong;  Li, Hongjian;  Li, Zhicong;  Yao, Ran;  Wang, Bing;  Li, Panpan;  Li, Jing;  Yi, Xiaoyan;  Wang, Junxi;  Li, Jinmin
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Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 10, 页码: 104002
Authors:  Li, Panpan;  Li, Hongjian;  Zhang, Yiyun;  Li, Zhicong;  Liang, Meng;  Li, Jing;  Wang, Guohong
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Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文
IEEE International Conference on Group IV Photonics GFP, 2011, 卷号: 32, 期号: 11, 页码: 114007
Authors:  Li, Zhicong;  Li, Panpan;  Wang, Bing;  Li, Hongjian;  Liang, Meng;  Yao, Ran;  Li, Jing;  Deng, Yuanming;  Yi, Xiaoyan;  Wang, Guohong;  Li, Jinmin;  Li, Z.(lizc@semi.ac.cn)
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Diodes  Electrostatic Devices  Electrostatic Discharge  Gallium Alloys  Gallium Nitride  Light Emission  
一种提高氮化镓基发光二极管抗静电能力的方法 专利
专利类型: 发明, 专利号: CN102214740A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  李志聪;  姚然;  王兵;  梁萌;  李鸿渐;  李盼盼;  李璟;  王国宏;  李晋闽
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