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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体照明研... [14]
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李志聪 [1]
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150lm/W 的 GaN 基 LED 量子效率提升研究
学位论文
, 北京: 中国科学院研究生院, 2014
Authors:
李鸿渐
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View/Download:873/109
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Submit date:2014/06/03
Pyramid Array InGaNGaN Core–Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes
期刊论文
Applied Physics Express, 2013, 卷号: 6, 期号: 7, 页码: 072102
Authors:
Kang, Junjie
;
Li, Zhi
;
Li, Hongjian
;
Liu, Zhiqiang
;
Li, Xiao
;
Yi, Xiaoyan
;
Ma, Ping
;
Zhu, Hongwei
;
Wang, Guohong
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View/Download:752/134
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Submit date:2014/04/09
Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer
期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 10, 页码: 102104
Authors:
Kang, Junjie
;
Li, Hongjian
;
Li, Zhi
;
Liu, Zhiqiang
;
Ma, Ping
;
Yi, Xiaoyan
;
Wang, Guohong
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View/Download:748/297
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Submit date:2014/04/09
Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
期刊论文
AIP Advances, 2013, 卷号: 3, 期号: 7, 页码: 072121
Authors:
Junjie Kang, Zhi Li, Hongjian Li, Zhiqiang Liu, Ping Ma, Xiaoyan Yi, Guohong Wang
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View/Download:400/122
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Submit date:2014/04/09
Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 1, 页码: 011105
Authors:
Li, Hongjian
;
Kang, Junjie
;
Li, Panpan
;
Ma, Jun
;
Wang, Hui
;
Liang, Meng
;
Li, Zhicong
;
Li, Jing
;
Yi, Xiaoyan
;
Wang, Guohong
Adobe PDF(1035Kb)
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View/Download:1731/608
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Submit date:2013/10/08
Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well
期刊论文
APPLIED PHYSICS EXPRESS, 2013, 卷号: 6, 期号: 5, 页码: 052102
Authors:
Li, Hongjian
;
Li, Panpan
;
Kang, Junjie
;
Li, Zhi
;
Zhang, Yiyun
;
Li, Zhicong
;
Li, Jing
;
Yi, Xiaoyan
;
Li, Jinmin
;
Wang, Guohong
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View/Download:990/222
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Submit date:2013/08/27
Low threading dislocation density in GaN films grown on patterned sapphire substrates
期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 11, 页码: 113002
Authors:
Liang, Meng
;
Wang, Guohong
;
Li, Hongjian
;
Li, Zhicong
;
Yao, Ran
;
Wang, Bing
;
Li, Panpan
;
Li, Jing
;
Yi, Xiaoyan
;
Wang, Junxi
;
Li, Jinmin
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View/Download:722/144
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Submit date:2013/05/07
Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer
期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 10, 页码: 104002
Authors:
Li, Panpan
;
Li, Hongjian
;
Zhang, Yiyun
;
Li, Zhicong
;
Liang, Meng
;
Li, Jing
;
Wang, Guohong
Adobe PDF(342Kb)
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View/Download:1068/332
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Submit date:2013/05/07
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
期刊论文
IEEE International Conference on Group IV Photonics GFP, 2011, 卷号: 32, 期号: 11, 页码: 114007
Authors:
Li, Zhicong
;
Li, Panpan
;
Wang, Bing
;
Li, Hongjian
;
Liang, Meng
;
Yao, Ran
;
Li, Jing
;
Deng, Yuanming
;
Yi, Xiaoyan
;
Wang, Guohong
;
Li, Jinmin
;
Li, Z.(lizc@semi.ac.cn)
Adobe PDF(170Kb)
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View/Download:1034/337
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Submit date:2012/06/14
Diodes
Electrostatic Devices
Electrostatic Discharge
Gallium Alloys
Gallium Nitride
Light Emission
一种提高氮化镓基发光二极管抗静电能力的方法
专利
专利类型: 发明, 专利号: CN102214740A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:
李志聪
;
姚然
;
王兵
;
梁萌
;
李鸿渐
;
李盼盼
;
李璟
;
王国宏
;
李晋闽
Adobe PDF(1092Kb)
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View/Download:1182/306
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Submit date:2012/09/09