SEMI OpenIR  > 中科院半导体材料科学重点实验室
生长InP基InAs量子阱的方法
季海铭; 罗帅; 杨涛
Rights Holder中国科学院半导体研究所
Date Available2013-03-20 ; 2013-03-20
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-12-21
Application NumberCN201210564366.2
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25174
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
季海铭,罗帅,杨涛. 生长InP基InAs量子阱的方法.
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