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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体材料科... [12]
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MOCVD 生长 InAs/InP 自组织量子点材料及激光器应用研究
学位论文
, 北京: 中国科学院研究生院, 2013
Authors:
罗帅
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View/Download:1024/182
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Submit date:2013/06/20
A grating-coupled external cavity InAs_InP quantum dot laser with 85-nm tuning range
期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 9, 页码: 094211
Authors:
Wei Heng, Jin Peng, Luo Shuai, Ji Hai-Ming, Yang Tao, Li Xin-Kun, Wu Jian, An Qi, Wu Yan-Hua, Chen Hong-Mei, Wang Fei-Fei, Wu Ju, Wang Zhan-Guo
Adobe PDF(468Kb)
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View/Download:521/219
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Submit date:2014/03/18
InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition
期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 6
Authors:
LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao
Adobe PDF(661Kb)
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View/Download:1121/415
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Submit date:2014/02/12
Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 359, 页码: 55-59
Authors:
Li LG (Li, Li-Gong)
;
Liu SM (Liu, Shu-Man)
;
Luo S (Luo, Shuai)
;
Yang T (Yang, Tao)
;
Wang LJ (Wang, Li-Jun)
;
Liu JQ (Liu, Jun-Qi)
;
Liu FQ (Liu, Feng-Qi)
;
Ye XL (Ye, Xiao-Ling)
;
Xu B (Xu, Bo)
;
Wang ZG (Wang, Zhan-Guo)
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View/Download:1023/235
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Submit date:2013/03/26
Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces
期刊论文
Nanoscale Research Letters, 2012, 卷号: 7, 页码: 160
Authors:
Li, Li-Gong
;
Liu, Shu-Man
;
Luo, Shuai
;
Yang, Tao
;
Wang, Li-Jun
;
Liu, Feng-Qi
;
Ye, Xiao-Ling
;
Xu, Bo
;
Wang, Zhan-Guo
Adobe PDF(814Kb)
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View/Download:776/184
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Submit date:2013/05/07
Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 11, 页码: 116802
Authors:
Li LG (Li Li-Gong)
;
Liu SM (Liu Shu-Man)
;
Luo S (Luo Shuai)
;
Yang T (Yang Tao)
;
Wang LJ (Wang Li-Jun)
;
Liu FQ (Liu Feng-Qi)
;
Ye XL (Ye Xiao-Ling)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Zhan-Guo)
Adobe PDF(1205Kb)
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View/Download:1119/323
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Submit date:2012/02/21
生长InP基InAs量子阱的方法
专利
专利类型: 发明, 公开日期: 2013-03-20, 2013-03-20
Inventors:
季海铭
;
罗帅
;
杨涛
Adobe PDF(434Kb)
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View/Download:452/101
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Submit date:2014/10/24
制作砷化铟/磷化铟量子点激光器有源区的方法
专利
专利类型: 发明, 公开日期: 2012-09-19
Inventors:
罗帅
;
季海铭
;
杨涛
Adobe PDF(361Kb)
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View/Download:408/79
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Submit date:2014/10/28
锑作为表面活性剂的InP基InAs量子阱材料的生长方法
专利
专利类型: 发明, 公开日期: 2013-05-01
Inventors:
季海铭
;
罗帅
;
杨涛
Adobe PDF(292Kb)
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View/Download:374/112
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Submit date:2014/12/25
制作宽光谱砷化铟/磷化铟量子点激光器有源区的方法
专利
专利类型: 发明, 公开日期: 2016-09-28
Inventors:
杨涛
;
高凤
;
罗帅
;
季海铭
Adobe PDF(531Kb)
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View/Download:192/29
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Submit date:2016/09/28