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题名: New method for the growth of highly uniform quantum dots
作者: Pan D;  Zeng YP;  Kong MY
出版日期: 1998
会议日期: MAY 19-21, 1997
摘要: A new method is realized for the growth of self-formed quantum dots. We identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. Unlike the Stranski-Krastanow (S-K) growth mode, the islands do not form during the growth of the corresponding strained single layers. Highly uniform quantum dots can be self-formed via this mechanism. The low temperature spectra of self-formed InGaAs/GaAs quantum dot superlattices grown on a (001) GaAs substrate have a full width at half maximum of 26-34 meV, indicating a better uniformity of quantum dot size than those grown in the S-K mode. This method can provide great degrees of freedom in designing possible quantum dot devices. 1998 Published by Elsevier Science B.V. All rights reserved.
会议名称: 2nd International Conference on Low Dimensional Structures and Devices
KOS主题词: atomic layer deposition;  Gallium arsenide;  Dislocations;  multilayers;  Defects;  strain
会议文集: MICROELECTRONIC ENGINEERING, 43-4
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Pan D; Zeng YP; Kong MY .New method for the growth of highly uniform quantum dots .见:ELSEVIER SCIENCE BV .MICROELECTRONIC ENGINEERING, 43-4,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,1998,79-83
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