New method for the growth of highly uniform quantum dots

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	New method for the growth of highly uniform quantum dots
	Pan D; Zeng YP; Kong MY; Pan D Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: dongpan@red.senu.ac.cn
	1998
会议名称	2nd International Conference on Low Dimensional Structures and Devices
会议录名称	MICROELECTRONIC ENGINEERING, 43-4
页码	79-83
会议日期	MAY 19-21, 1997
会议地点	LISBON, PORTUGAL
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0167-9317
部门归属	chinese acad sci, inst semicond, mat ctr, beijing 100083, peoples r china
摘要	A new method is realized for the growth of self-formed quantum dots. We identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. Unlike the Stranski-Krastanow (S-K) growth mode, the islands do not form during the growth of the corresponding strained single layers. Highly uniform quantum dots can be self-formed via this mechanism. The low temperature spectra of self-formed InGaAs/GaAs quantum dot superlattices grown on a (001) GaAs substrate have a full width at half maximum of 26-34 meV, indicating a better uniformity of quantum dot size than those grown in the S-K mode. This method can provide great degrees of freedom in designing possible quantum dot devices. 1998 Published by Elsevier Science B.V. All rights reserved.
关键词	Self-formed Quantum Dot Stranski-krastanow Growth Mode Superlattice Molecular-beam Epitaxy Ingaas Gaas Dislocations Multilayers Defects Strain
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15063
专题	中国科学院半导体研究所（2009年前）
通讯作者	Pan D Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: dongpan@red.senu.ac.cn
推荐引用方式 GB/T 7714	Pan D,Zeng YP,Kong MY,et al. New method for the growth of highly uniform quantum dots[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:79-83.

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