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题名: Self-organization of the InGaAs GaAs quantum dots superlattice
作者: Zhuang QD;  Li HX;  Pan L;  Li JM;  Kong MY;  Lin LY
出版日期: 1999
会议日期: AUG 31-SEP 04, 1998
摘要: The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) was investigated with cross-sectional transmission electron microscopy (XTEM), and double-crystal X-ray diffraction (DCXD). We found that the QDs spacing in the first layer can affect the vertical alignment of QDs. There seems to exist one critical lateral QD spacing, below which merging of QDs with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. Once the critical value of QDs spacing is reached, the InGaAs QDs of the first layer are simply reproduced in the upper layers. The X-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the QDs superlattice, and multi-quantum wells (QW) formed by the wetting layers around QDs. (C) 1999 Elsevier Science B.V. All rights reserved.
会议名称: 10th International Conference on Molecular Beam Epitaxy (MBE-X)
KOS主题词: X-ray crystallography;  Islands;  Surfaces;  Development
会议文集: JOURNAL OF CRYSTAL GROWTH, 201
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhuang QD; Li HX; Pan L; Li JM; Kong MY; Lin LY .Self-organization of the InGaAs GaAs quantum dots superlattice .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 201,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,1999,1161-1163
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