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题名: The effects of carbonized buffer layer on the growth of SiC on Si
作者: Wang YS;  Li JM;  Zhang FF;  Lin LY
出版日期: 1999
会议日期: AUG 31-SEP 04, 1998
摘要: Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.
会议名称: 10th International Conference on Molecular Beam Epitaxy (MBE-X)
KOS主题词: beam
会议文集: JOURNAL OF CRYSTAL GROWTH, 201
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wang YS; Li JM; Zhang FF; Lin LY .The effects of carbonized buffer layer on the growth of SiC on Si .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 201,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,1999,564-567
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