The effects of carbonized buffer layer on the growth of SiC on Si

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The effects of carbonized buffer layer on the growth of SiC on Si
	Wang YS; Li JM; Zhang FF; Lin LY; Wang YS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1999
会议名称	10th International Conference on Molecular Beam Epitaxy (MBE-X)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 201
页码	564-567
会议日期	AUG 31-SEP 04, 1998
会议地点	CANNES, FRANCE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.
关键词	Heteroepitaxial Growth Hydrocarbon Radicals Si(001) Surface Beam
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15037
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang YS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang YS,Li JM,Zhang FF,et al. The effects of carbonized buffer layer on the growth of SiC on Si[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1999:564-567.

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