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题名: Structural properties of SI-GaAs grown in space
作者: Chen NF;  Wang YT;  Zhong XR;  Lin LY
出版日期: 1999
会议日期: JUL 12-19, 1998
摘要: The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.
会议名称: G0 1 Symposium of COSPAR Scientific Commission G Held at the 32nd COSPAR Scientific Assembly
KOS主题词: Reduced gravity environments;  Stoichiometry
会议文集: GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES, 24 (10)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Chen NF; Wang YT; Zhong XR; Lin LY .Structural properties of SI-GaAs grown in space .见:PERGAMON PRESS LTD .GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES, 24 (10),THE BOULEVARD LANGFORD LANE KIDLINGTON, OXFORD OX5 1GB, ENGLAND ,1999,1211-1214
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